Datasheet4U Logo Datasheet4U.com

FGA25N120ANTDTU-F109 - NPT Trench IGBT

This page provides the datasheet information for the FGA25N120ANTDTU-F109, a member of the FGA25N120 NPT Trench IGBT family.

Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • NPT Trench Technology, Positive Temperature Coefficient.
  • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C.
  • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C.
  • Extremely Enhanced Avalanche Capability.

📥 Download Datasheet

Datasheet preview – FGA25N120ANTDTU-F109

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Coefficient • Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C • Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C • Extremely Enhanced Avalanche Capability Applications • Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
Published: |