FGA25N120ANTDTU-F109 datasheet, igbt equivalent, ON Semiconductor

Features and benefits

* NPT Trench Technology, Positive Temperature Coefficient
* Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C
* Low Switching Loss: Eoff.

Application

* Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT.

Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-n.

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